17/05/2019
The Human Resources Strategy for Researchers

PhD student in design, fabrication and characterization of very high power transistors on GaN substr

This job offer has expired


  • ORGANISATION/COMPANY
    CNRS
  • RESEARCH FIELD
    Engineering
    Physics
    Technology
  • RESEARCHER PROFILE
    First Stage Researcher (R1)
  • APPLICATION DEADLINE
    07/06/2019 23:59 - Europe/Brussels
  • LOCATION
    France › TOULOUSE
  • TYPE OF CONTRACT
    Temporary
  • JOB STATUS
    Full-time
  • HOURS PER WEEK
    35
  • OFFER STARTING DATE
    01/10/2019

This PhD thesis will be carried out jointly by LAAS (Toulouse-France) and LN2 (Sherbrooke-Canada) laboratories. The design of the device will be mainly performed at LAAS while the fabrication will be done at LN2. The student will have to travel between these two laboratories to carry out his thesis work. The planning of this work will be agreed so that the student can spend a minimum of 6 months in each laboratory. Travel expenses will be covered. This thesis will be financed by the ANR-PRCE project "C-pi-GaN" which combines, in addition to LN2 and LAAS, the laboratories CRHEA and AMPERE and the industrial LUMILOG (Saint-Gobain group) which will supply the substrates of GaN. The candidate will be under the supervision of Professors Frédéric Morancho (LAAS) and Hassan Maher (LN2).

In the field of microelectronics, the most used material to date is silicon. To meet the increasingly demanding demands of the market, the manufacturers are able to make considerable efforts on the miniaturization of the component based on this historic material, while being limited by its relatively modest physical properties which are now problematic, particularly for power applications. III-V semiconductors are an excellent opportunity for these applications because they offer a very good alternative and a very wide choice of materials, in particular gallium nitride (GaN). The research area proposed in this Ph.D. focuses on power devices made from this material in order to push the current state of the art even higher. The student recruited will design and manufacture new devices using a free-standing GaN substrate. These devices will be integrated into an electronic system that interfaces with the power source and the load. In this type of applications, switching current and voltage is currently the main cause of energy dissipation, and therefore loss of efficiency of the converter. In the literature and in the industry, GaN-based devices on free-standing substrates are a new research theme not yet deeply explored. The work that will be done by the student will represent a novelty in the field of power electronics. In this context, the student will design, fabricate and characterize this new generation of devices. At first, he will be involved in a theoretical work, mainly on the device physics using commercial software of physical simulation. Then he will make the device. In the end, he will characterize it and make a comparison with the simulations to evaluate the quality of the technology developed. The student will proceed by iterations of this optimization cycle in order to improve the performance of the device. The recruited candidate must be highly motivated by experimental research and have good skills in semiconductor and device physics. He must be autonomous, have the sense of experimentation and teamwork.

Additional comments

This thesis will be funded by the ANR-PRCE project "C-pi-GaN" and will be conducted in co-supervision between the LAAS laboratories (Toulouse-France) and LN2 (Sherbrooke-Canada). The design of the device will be mainly performed at LAAS while the fabrication will be done at LN2. The student will spend 18 months in each laboratory.

Web site for additional job details

Required Research Experiences

  • RESEARCH FIELD
    Engineering
  • YEARS OF RESEARCH EXPERIENCE
    None
  • RESEARCH FIELD
    Physics
  • YEARS OF RESEARCH EXPERIENCE
    None
  • RESEARCH FIELD
    Technology
  • YEARS OF RESEARCH EXPERIENCE
    None

Offer Requirements

  • REQUIRED EDUCATION LEVEL
    Engineering: Master Degree or equivalent
    Physics: Master Degree or equivalent
    Technology: Master Degree or equivalent
  • REQUIRED LANGUAGES
    FRENCH: Basic
Work location(s)
1 position(s) available at
Laboratoire d'analyse et d'architecture des systèmes du CNRS
France
TOULOUSE

EURAXESS offer ID: 409285
Posting organisation offer ID: 9665

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